Технічний опис DS2016100 DALLAS
Description: IC SRAM 16KBIT PARALLEL 24DIP, DigiKey Programmable: Not Verified, Memory Organization: 2K x 8, Access Time: 100 ns, Memory Interface: Parallel, Write Cycle Time - Word, Page: 100ns, Supplier Device Package: 24-PDIP, Memory Format: SRAM, Technology: SRAM, Voltage - Supply: 2.7V ~ 5.5V, Operating Temperature: -40°C ~ 85°C (TA), Memory Type: Volatile, Memory Size: 16Kbit, Mounting Type: Through Hole, Package / Case: 24-DIP (0.600", 15.24mm), Packaging: Tube.
Інші пропозиції DS2016100
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| DS2016-100 | Виробник : DALLAS |
 2002 |
на замовлення 198 шт: термін постачання 14-28 дні (днів) |
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DS2016-100 | Виробник : Analog Devices Inc./Maxim Integrated |
Description: IC SRAM 16KBIT PARALLEL 24DIP DigiKey Programmable: Not Verified Memory Organization: 2K x 8 Access Time: 100 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 100ns Supplier Device Package: 24-PDIP Memory Format: SRAM Technology: SRAM Voltage - Supply: 2.7V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Volatile Memory Size: 16Kbit Mounting Type: Through Hole Package / Case: 24-DIP (0.600", 15.24mm) Packaging: Tube |
товару немає в наявності |
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DS2016-100+ | Виробник : Analog Devices Inc./Maxim Integrated |
Description: IC SRAM 16KBIT PARALLEL 24DIP DigiKey Programmable: Not Verified Memory Organization: 2K x 8 Access Time: 100 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 100ns Supplier Device Package: 24-PDIP Memory Format: SRAM Technology: SRAM Voltage - Supply: 2.7V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Volatile Memory Size: 16Kbit Mounting Type: Through Hole Package / Case: 24-DIP (0.600", 15.24mm) Packaging: Tube |
товару немає в наявності |