DSB5817/TR Microchip Technology
Виробник: Microchip Technology
Description: DIODE SCHOTTKY REV 20V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO041, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
Description: DIODE SCHOTTKY REV 20V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO041, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
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Технічний опис DSB5817/TR Microchip Technology
Description: DIODE SCHOTTKY REV 20V 1A DO41, Packaging: Tape & Reel (TR), Package / Case: DO-204AL, DO041, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Reverse Polarity, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-41, Operating Temperature - Junction: -55°C ~ 125°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 20 V, Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A, Current - Reverse Leakage @ Vr: 100 µA @ 20 V.