DTA113ZSATP Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 300MW SPT
Packaging: Tape & Box (TB)
Power - Max: 300 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 1 kOhms
Frequency - Transition: 250 MHz
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SPT
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Through Hole
Package / Case: SC-72 Formed Leads
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Технічний опис DTA113ZSATP Rohm Semiconductor
Description: TRANS PREBIAS PNP 300MW SPT, Packaging: Tape & Box (TB), Power - Max: 300 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Resistor - Emitter Base (R2): 10 kOhms, Resistor - Base (R1): 1 kOhms, Frequency - Transition: 250 MHz, Current - Collector (Ic) (Max): 100 mA, Supplier Device Package: SPT, DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Transistor Type: PNP - Pre-Biased, Mounting Type: Through Hole, Package / Case: SC-72 Formed Leads.