DTD114ESTP Rohm Semiconductor

Description: TRANS PREBIAS NPN 50V 0.5A SPT, Resistor - Emitter Base (R2): 10 kOhms, Resistor - Base (R1): 10 kOhms, Frequency - Transition: 200 MHz, Power - Max: 300 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 500 mA, Part Status: Obsolete, Supplier Device Package: SPT, DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Through Hole, Package / Case: SC-72 Formed Leads, Packaging: Tape & Box (TB).