Продукція > ROHM SEMICONDUCTOR > DTD123TSTP
DTD123TSTP

DTD123TSTP Rohm Semiconductor

DTD123TK,TS.pdf
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 40V 0.5A SPT
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 200 MHz
Power - Max: 300 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SPT
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Through Hole
Package / Case: SC-72 Formed Leads
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
Відгуки про товар
Написати відгук

Технічний опис DTD123TSTP Rohm Semiconductor

Description: TRANS PREBIAS NPN 40V 0.5A SPT, Resistor - Base (R1): 2.2 kOhms, Frequency - Transition: 200 MHz, Power - Max: 300 mW, Voltage - Collector Emitter Breakdown (Max): 40 V, Current - Collector (Ic) (Max): 500 mA, Supplier Device Package: SPT, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V, Current - Collector Cutoff (Max): 500nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Through Hole, Package / Case: SC-72 Formed Leads, Packaging: Tape & Reel (TR).