DXTN3C100PDQ-13 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: SS Low Sat Transistor PowerDI506
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.47W
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 330mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 10V
Frequency - Transition: 130MHz
Supplier Device Package: PowerDI5060-8 (Type UXD)
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1481 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 54.89 грн |
| 10+ | 45.83 грн |
| 100+ | 31.74 грн |
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Технічний опис DXTN3C100PDQ-13 Diodes Incorporated
Description: SS Low Sat Transistor PowerDI506, Packaging: Bulk, Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Transistor Type: 2 NPN (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 1.47W, Current - Collector (Ic) (Max): 3A, Voltage - Collector Emitter Breakdown (Max): 100V, Vce Saturation (Max) @ Ib, Ic: 330mV @ 300mA, 3A, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 10V, Frequency - Transition: 130MHz, Supplier Device Package: PowerDI5060-8 (Type UXD), Grade: Automotive, Qualification: AEC-Q101.