E3M0021120K Wolfspeed, Inc.
Виробник: Wolfspeed, Inc.Description: SIC, MOSFET, 21M, 1200V, TO-247-
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 28.8mOhm @ 62.1A, 15V
Power Dissipation (Max): 405W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 17.1mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 1000 V
Qualification: AEC-Q101
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Технічний опис E3M0021120K Wolfspeed, Inc.
Description: SIC, MOSFET, 21M, 1200V, TO-247-, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 104A (Tc), Rds On (Max) @ Id, Vgs: 28.8mOhm @ 62.1A, 15V, Power Dissipation (Max): 405W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 17.1mA, Supplier Device Package: TO-247-4L, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +19V, -8V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 1000 V, Qualification: AEC-Q101.