E4D20120D Wolfspeed, Inc.
Виробник: Wolfspeed, Inc.
Description: DIODE ARR SIC 1200V 33A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 712pF @ 0V, 1MHz
Current - Average Rectified (Io): 33A
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 33A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1885.35 грн |
| 30+ | 1171.32 грн |
| 120+ | 1059.36 грн |
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Технічний опис E4D20120D Wolfspeed, Inc.
Description: DIODE ARR SIC 1200V 33A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 712pF @ 0V, 1MHz, Current - Average Rectified (Io): 33A, Diode Configuration: 1 Pair Common Anode, Current - Average Rectified (Io) (per Diode): 33A, Supplier Device Package: TO-247-3, Operating Temperature - Junction: -55°C ~ 175°C, Grade: Automotive, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A, Current - Reverse Leakage @ Vr: 200 µA @ 1200 V.
