
E6D10065G Wolfspeed, Inc.

Description: WOLFSPEED SIC, SCHOTTKY DIODE
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 630pF @ 0V, 1MHz
Current - Average Rectified (Io): 32A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна |
---|---|
1+ | 385.04 грн |
10+ | 242.27 грн |
50+ | 188.00 грн |
100+ | 160.21 грн |
250+ | 142.71 грн |
500+ | 131.95 грн |
1000+ | 123.81 грн |
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Технічний опис E6D10065G Wolfspeed, Inc.
Description: WOLFSPEED SIC, SCHOTTKY DIODE, Packaging: Bulk, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 630pF @ 0V, 1MHz, Current - Average Rectified (Io): 32A, Supplier Device Package: TO-263-2, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A, Current - Reverse Leakage @ Vr: 50 µA @ 650 V.