E6D20065H Wolfspeed, Inc.
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 59A TO2472
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Bulk
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 75 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 650 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 59A
Capacitance @ Vr, F: 1277pF @ 0V, 1MHz
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 687.34 грн |
| 30+ | 389.94 грн |
| 120+ | 330.33 грн |
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Технічний опис E6D20065H Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 59A TO2472, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-2, Packaging: Bulk, Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 75 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A, Voltage - DC Reverse (Vr) (Max): 650 V, Grade: Automotive, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-247-2, Current - Average Rectified (Io): 59A, Capacitance @ Vr, F: 1277pF @ 0V, 1MHz.
