Технічний опис ECH8619-TL-E ON Semiconductor
Description: MOSFET N/P-CH 60V 3A/2A 8ECH, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.5W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 3A, 2A, Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 20V, Rds On (Max) @ Id, Vgs: 93mOhm @ 1.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 12.8nC @ 10V, FET Feature: Logic Level Gate, Supplier Device Package: 8-ECH.
Інші пропозиції ECH8619-TL-E
| Фото | Назва | Виробник | Інформація |
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ECH8619-TL-E | Виробник : onsemi |
 Description: MOSFET N/P-CH 60V 3A/2A 8ECHPackaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A, 2A Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 20V Rds On (Max) @ Id, Vgs: 93mOhm @ 1.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 12.8nC @ 10V FET Feature: Logic Level Gate Supplier Device Package: 8-ECH |
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