EDB8164B4PR-1D-F-R TR Micron Technology Inc.
Виробник: Micron Technology Inc.
Description: IC DRAM 8GBIT PAR 216FBGA
Packaging: Tape & Reel (TR)
Package / Case: 216-WFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -30°C ~ 85°C (TC)
Voltage - Supply: 1.14V ~ 1.95V
Technology: SDRAM - Mobile LPDDR2
Clock Frequency: 533 MHz
Memory Format: DRAM
Supplier Device Package: 216-FBGA (12x12)
Memory Interface: Parallel
Memory Organization: 128M x 64
DigiKey Programmable: Not Verified
Description: IC DRAM 8GBIT PAR 216FBGA
Packaging: Tape & Reel (TR)
Package / Case: 216-WFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -30°C ~ 85°C (TC)
Voltage - Supply: 1.14V ~ 1.95V
Technology: SDRAM - Mobile LPDDR2
Clock Frequency: 533 MHz
Memory Format: DRAM
Supplier Device Package: 216-FBGA (12x12)
Memory Interface: Parallel
Memory Organization: 128M x 64
DigiKey Programmable: Not Verified
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Технічний опис EDB8164B4PR-1D-F-R TR Micron Technology Inc.
Description: IC DRAM 8GBIT PAR 216FBGA, Packaging: Tape & Reel (TR), Package / Case: 216-WFBGA, Mounting Type: Surface Mount, Memory Size: 8Gbit, Memory Type: Volatile, Operating Temperature: -30°C ~ 85°C (TC), Voltage - Supply: 1.14V ~ 1.95V, Technology: SDRAM - Mobile LPDDR2, Clock Frequency: 533 MHz, Memory Format: DRAM, Supplier Device Package: 216-FBGA (12x12), Memory Interface: Parallel, Memory Organization: 128M x 64, DigiKey Programmable: Not Verified.