EGF1C-E3/5CA Vishay General Semiconductor - Diodes Division

Description: DIODE GEN PURP 150V 1A DO214BA, Current - Reverse Leakage @ Vr: 5 µA @ 150 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 150 V, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: DO-214BA (GF1), Current - Average Rectified (Io): 1A, Capacitance @ Vr, F: 15pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 50 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-214BA, Packaging: Tape & Reel (TR).