EGP30F-E3/73 Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes DivisionDescription: DIODE STANDARD 300V 3A GP20
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
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Технічний опис EGP30F-E3/73 Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 300V 3A GP20, Packaging: Tape & Box (TB), Package / Case: DO-201AA, DO-27, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50 ns, Technology: Standard, Current - Average Rectified (Io): 3A, Supplier Device Package: GP20, Operating Temperature - Junction: -65°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 300 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A, Current - Reverse Leakage @ Vr: 5 µA @ 300 V.