EGP30G-TP Micro Commercial Co
Виробник: Micro Commercial CoDescription: DIODE GEN PURP 400V 3A DO201AE
Packaging: Tape & Reel (TR)
Package / Case: DO-201AE, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AE
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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Технічний опис EGP30G-TP Micro Commercial Co
Description: DIODE GEN PURP 400V 3A DO201AE, Packaging: Tape & Reel (TR), Package / Case: DO-201AE, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50 ns, Technology: Standard, Current - Average Rectified (Io): 3A, Supplier Device Package: DO-201AE, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 400 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A, Current - Reverse Leakage @ Vr: 5 µA @ 400 V.
Інші пропозиції EGP30G-TP
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| EGP30G-TP | Виробник : Micro Commercial Co |
Description: DIODE GEN PURP 400V 3A DO201AE Packaging: Cut Tape (CT) Package / Case: DO-201AE, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AE Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
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