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EL-MAKR04120PA

EL-MAKR04120PA EVERLIGHT

pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB8F4787BF0C440DC&compId=EL-MAKR04120PA.pdf?ci_sign=3ddb7d6bb73a911c1ccb3fff8e10873087c2b359 Виробник: EVERLIGHT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 39A; Idm: 171A; 454W
Polarisation: unipolar
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Kind of package: tube
Technology: SiC
Gate-source voltage: -4...18V
Gate charge: 115nC
On-state resistance: 0.1Ω
Drain current: 39A
Pulsed drain current: 171A
Power dissipation: 454W
Drain-source voltage: 1.2kV
Case: TO247-4
на замовлення 15 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+910.16 грн
2+581.28 грн
5+548.99 грн
В кошику  од. на суму  грн.
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Технічний опис EL-MAKR04120PA EVERLIGHT

Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 39A; Idm: 171A; 454W, Polarisation: unipolar, Mounting: THT, Kind of channel: enhancement, Features of semiconductor devices: Kelvin terminal, Type of transistor: N-MOSFET, Kind of package: tube, Technology: SiC, Gate-source voltage: -4...18V, Gate charge: 115nC, On-state resistance: 0.1Ω, Drain current: 39A, Pulsed drain current: 171A, Power dissipation: 454W, Drain-source voltage: 1.2kV, Case: TO247-4.