EPC2030
Виробник: EPC
Description: GANFET NCH 40V 31A DIE
Drain to Source Voltage (Vdss): 40 V
Part Status: Not For New Designs
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 2.5V @ 16mA
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 5V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
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Технічний опис EPC2030 EPC
Description: GANFET NCH 40V 31A DIE, Drain to Source Voltage (Vdss): 40 V, Part Status: Not For New Designs, Supplier Device Package: Die, Vgs(th) (Max) @ Id: 2.5V @ 16mA, Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 5V, Current - Continuous Drain (Id) @ 25°C: 31A (Ta), FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: Die, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V.
Інші пропозиції EPC2030 за ціною від 310.79 грн до 641.62 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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EPC2030 | EPC |
Description: GANFET NCH 40V 31A DIE Packaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Ta) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 5V Vgs(th) (Max) @ Id: 2.5V @ 16mA Supplier Device Package: Die Part Status: Not For New Designs Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 20 V |
на замовлення 2938 шт: термін постачання 21-31 дні (днів) |
|
| EPC2030 |
|
Виробник: EPC
Description: GANFET NCH 40V 31A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 16mA
Supplier Device Package: Die
Part Status: Not For New Designs
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 20 V
Description: GANFET NCH 40V 31A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 16mA
Supplier Device Package: Die
Part Status: Not For New Designs
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 20 V
на замовлення 2938 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 641.62 грн |
| 10+ | 421.61 грн |
| 100+ | 310.79 грн |