EPC7004BC EPC Space, LLC

Description: GAN FET HEMT100V30A COTS 4FSMD-B, Packaging: Tray, Package / Case: 4-SMD, No Lead, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 5V, Vgs(th) (Max) @ Id: 2.5V @ 7mA, Supplier Device Package: 4-SMD, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): +6V, -4V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 797 pF @ 50 V.