EPC7018DC EPC Space, LLC
Виробник: EPC Space, LLCDescription: GAN FET HEMT 100V 74A COTS 4UD
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 50V
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 70A, 5V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Supplier Device Package: 4-SMD
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 22212.41 грн |
| 10+ | 20034.13 грн |
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Технічний опис EPC7018DC EPC Space, LLC
Description: GAN FET HEMT 100V 74A COTS 4UD, Packaging: Bulk, Package / Case: 4-SMD, No Lead, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 50V, Rds On (Max) @ Id, Vgs: 6.5mOhm @ 70A, 5V, Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V, Vgs(th) (Max) @ Id: 2.5V @ 5mA, Supplier Device Package: 4-SMD.