ES1DL R2G TAIWAN SEMICONDUCTOR
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; subSMA; Ufmax: 0.95V
Mounting: SMD
Case: subSMA
Capacitance: 10pF
Max. off-state voltage: 200V
Max. forward voltage: 0.95V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 30A
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: glass passivated; ultrafast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; subSMA; Ufmax: 0.95V
Mounting: SMD
Case: subSMA
Capacitance: 10pF
Max. off-state voltage: 200V
Max. forward voltage: 0.95V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 30A
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: glass passivated; ultrafast switching
на замовлення 1010 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
45+ | 8.32 грн |
51+ | 6.83 грн |
100+ | 6 грн |
145+ | 5.51 грн |
399+ | 5.21 грн |
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Технічний опис ES1DL R2G TAIWAN SEMICONDUCTOR
Category: SMD universal diodes, Description: Diode: rectifying; SMD; 200V; 1A; 35ns; subSMA; Ufmax: 0.95V, Mounting: SMD, Case: subSMA, Capacitance: 10pF, Max. off-state voltage: 200V, Max. forward voltage: 0.95V, Load current: 1A, Semiconductor structure: single diode, Reverse recovery time: 35ns, Max. forward impulse current: 30A, Kind of package: reel; tape, Type of diode: rectifying, Features of semiconductor devices: glass passivated; ultrafast switching, кількість в упаковці: 1 шт.
Інші пропозиції ES1DL R2G за ціною від 6.05 грн до 9.99 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||
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ES1DL R2G | Виробник : TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 35ns; subSMA; Ufmax: 0.95V Mounting: SMD Case: subSMA Capacitance: 10pF Max. off-state voltage: 200V Max. forward voltage: 0.95V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 35ns Max. forward impulse current: 30A Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: glass passivated; ultrafast switching кількість в упаковці: 1 шт |
на замовлення 1010 шт: термін постачання 7-14 дні (днів) |
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ES1DL R2G | Виробник : Taiwan Semiconductor | Rectifiers 35ns, 1A, 200V, Super Fast Recovery Rectifier |
товар відсутній |