ES1E-HF Comchip Technology

Description: DIODE GEN PURP 300V 1A DO214AC, Capacitance @ Vr, F: 15pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 35 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-214AC, SMA, Packaging: Tape & Reel (TR), Current - Reverse Leakage @ Vr: 5 µA @ 300 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 300 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-214AC (SMA), Current - Average Rectified (Io): 1A.