Технічний опис ES2AAHM2G Taiwan Semiconductor
Description: DIODE GEN PURP 50V 2A DO214AC, Packaging: Tape & Reel (TR), Package / Case: DO-214AC, SMA, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35 ns, Technology: Standard, Capacitance @ Vr, F: 25pF @ 4V, 1MHz, Current - Average Rectified (Io): 2A, Supplier Device Package: DO-214AC (SMA), Operating Temperature - Junction: -55°C ~ 150°C, Grade: Automotive, Part Status: Discontinued at Digi-Key, Voltage - DC Reverse (Vr) (Max): 50 V, Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A, Current - Reverse Leakage @ Vr: 10 µA @ 50 V, Qualification: AEC-Q101.
Інші пропозиції ES2AAHM2G
Фото | Назва | Виробник | Інформація |
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ES2AAHM2G | Виробник : Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V Qualification: AEC-Q101 |
товару немає в наявності |