ESH2CHE3_A/I Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 2A DO214AA
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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Технічний опис ESH2CHE3_A/I Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 2A DO214AA, Current - Reverse Leakage @ Vr: 2 µA @ 150 V, Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A, Voltage - DC Reverse (Vr) (Max): 150 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: DO-214AA (SMB), Current - Average Rectified (Io): 2A, Capacitance @ Vr, F: 30pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 25 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-214AA, SMB, Packaging: Tape & Reel (TR).
Інші пропозиції ESH2CHE3_A/I
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| ESH2CHE3_A/I | Виробник : Vishay Semiconductors |
Rectifiers 2A,150V,25ns SMB, UF Rect, SMD |
товару немає в наявності |