F1235R12KT4GBOSA1 Infineon Technologies


23ds_f12-35r12kt4g_2_05b15d.pdffolderiddb3a304412b407950112b4095b06.pdf Виробник: Infineon Technologies
Trans IGBT Module N-CH 1200V 35A 210000mW 38-Pin ECONO3-4
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Технічний опис F1235R12KT4GBOSA1 Infineon Technologies

Description: IGBT MOD 1200V 35A 210W, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A, NTC Thermistor: No, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Part Status: Obsolete, Current - Collector (Ic) (Max): 35 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 210 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 2 nF @ 25 V.

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F1235R12KT4GBOSA1 F1235R12KT4GBOSA1 Виробник : Infineon Technologies F12-35R12KT4G_Rev2_2013-11-04.pdf Description: IGBT MOD 1200V 35A 210W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Obsolete
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 210 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
товар відсутній