F475R07W2H3B51BPSA1 Infineon Technologies


264infineon-f4-75r07w2h3_b51-ds-v02_00-en.pdffileid5546d4624933b8750.pdf Виробник: Infineon Technologies
Easy IGBT module with CoolMOS and Press FIT/NTC
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Технічний опис F475R07W2H3B51BPSA1 Infineon Technologies

Description: IGBT MODULE 650V 75A 250W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 37.5A, NTC Thermistor: Yes, Supplier Device Package: Module, Part Status: Obsolete, Current - Collector (Ic) (Max): 75 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 250 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 4.7 nF @ 25 V.

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F475R07W2H3B51BPSA1 Виробник : Infineon Technologies Infineon-F4-75R07W2H3_B51-DS-v02_00-EN.pdf?fileId=5546d4624933b87501497522b7240cf9 Description: IGBT MODULE 650V 75A 250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 37.5A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.7 nF @ 25 V
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