FAD3171MX onsemi
Виробник: onsemi
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Supply: 6V ~ 18V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 110 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 15ns, 10ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Grade: Automotive
Qualification: AEC-Q100
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Supply: 6V ~ 18V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 110 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 15ns, 10ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Grade: Automotive
Qualification: AEC-Q100
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Технічний опис FAD3171MX onsemi
Description: IC GATE DRVR HIGH-SIDE 8SOIC, Packaging: Bulk, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Voltage - Supply: 6V ~ 18V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 110 V, Supplier Device Package: 8-SOIC, Rise / Fall Time (Typ): 15ns, 10ns, Channel Type: Single, Driven Configuration: High-Side, Number of Drivers: 2, Gate Type: N-Channel MOSFET, Current - Peak Output (Source, Sink): 2.5A, 2.5A, Grade: Automotive, Qualification: AEC-Q100.