FBG10N05ASH EPC Space, LLC

Description: GAN FET HEMT 100V 5A 4FSMD-A, Packaging: Bulk, Package / Case: 4-SMD, No Lead, Current Rating (Amps): 250µA, Mounting Type: Surface Mount, Configuration: N-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaN HEMT, FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 5V, Vgs(th) (Max) @ Id: 2.5V @ 1.2mA, Supplier Device Package: 4-SMD, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): +6V, -4V, Drain to Source Voltage (Vdss): 100 V, Voltage - Rated: 100 V, Voltage - Test: 50 V, Current - Test: 5 A, Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 233 pF @ 50 V.