FBG20N04AC EPC Space, LLC
Виробник: EPC Space, LLCDescription: GAN FET HEMT 200V 4A 4FSMD-A
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 100V
Rds On (Max) @ Id, Vgs: 130mOhm @ 4A, 5V
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: 4-SMD
Part Status: Active
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Технічний опис FBG20N04AC EPC Space, LLC
Description: GAN FET HEMT 200V 4A 4FSMD-A, Package / Case: 4-SMD, No Lead, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 200V, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 100V, Rds On (Max) @ Id, Vgs: 130mOhm @ 4A, 5V, Gate Charge (Qg) (Max) @ Vgs: 3nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.8V @ 1mA, Supplier Device Package: 4-SMD, Part Status: Active.