FBG20N18BC EPC Space, LLC
Виробник: EPC Space, LLC
Description: GAN FET HEMT200V18A COTS 4FSMD-B
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 18A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
Description: GAN FET HEMT200V18A COTS 4FSMD-B
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 18A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
на замовлення 62 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 19189.7 грн |
| 10+ | 17307.52 грн |
Відгуки про товар
Написати відгук
Технічний опис FBG20N18BC EPC Space, LLC
Description: GAN FET HEMT200V18A COTS 4FSMD-B, Packaging: Bulk, Package / Case: 4-SMD, No Lead, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 26mOhm @ 18A, 5V, Vgs(th) (Max) @ Id: 2.5V @ 3mA, Supplier Device Package: 4-SMD, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): +6V, -4V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V.