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FBG30N04CSH EPC Space, LLC

FBG30N04C-datasheet.pdf Виробник: EPC Space, LLC
Description: MOSFET 2N-CH 300V 4A 4SMD
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 300V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 150V
Rds On (Max) @ Id, Vgs: 404mOhm @ 4A, 5V
Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 5V
Vgs(th) (Max) @ Id: 2.8V @ 600µA
Supplier Device Package: 4-SMD
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Технічний опис FBG30N04CSH EPC Space, LLC

Description: MOSFET 2N-CH 300V 4A 4SMD, Packaging: Bulk, Package / Case: 4-SMD, No Lead, Mounting Type: Surface Mount, Configuration: 2 N-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 300V, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 150V, Rds On (Max) @ Id, Vgs: 404mOhm @ 4A, 5V, Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 5V, Vgs(th) (Max) @ Id: 2.8V @ 600µA, Supplier Device Package: 4-SMD.