FD1000R33HE3KBOSA1 Infineon Technologies


Infineon-FD1000R33HE3_K-DataSheet-v03_02-EN.pdf?fileId=db3a30431ce5fb52011d76007b9a7266 Виробник: Infineon Technologies
Description: IGBT MODULE 3300V 1000A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Brake Chopper
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 1kA
NTC Thermistor: No
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1000 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 11500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 190 nF @ 25 V
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Технічний опис FD1000R33HE3KBOSA1 Infineon Technologies

Description: IGBT MODULE 3300V 1000A, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Dual Brake Chopper, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 1kA, NTC Thermistor: No, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 1000 A, Voltage - Collector Emitter Breakdown (Max): 3300 V, Power - Max: 11500 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 190 nF @ 25 V.