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FDAF69N25

FDAF69N25 Fairchild Semiconductor

FAIRS35906-1.pdf?t.download=true&u=5oefqw
Виробник: Fairchild Semiconductor
Description: MOSFET N-CH 250V 34A TO3PF
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4640 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
на замовлення 1930 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
121+165.84 грн
Мінімальне замовлення: 121
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Технічний опис FDAF69N25 Fairchild Semiconductor

Description: MOSFET N-CH 250V 34A TO3PF, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3 Full Pack, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 4640 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V, Drain to Source Voltage (Vdss): 250 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-3PF, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 115W (Tc), Rds On (Max) @ Id, Vgs: 41mOhm @ 17A, 10V, Current - Continuous Drain (Id) @ 25°C: 34A (Tc), FET Type: N-Channel.