FDC6333C-G onsemi
Виробник: onsemi
Description: MOSFET N/P-CH 30V 2.5A/2A SSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 282pF @ 15V, 185pF @ 15V
Rds On (Max) @ Id, Vgs: 95mOhm @ 2.5A, 10V, 130mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V, 5.7nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6
Description: MOSFET N/P-CH 30V 2.5A/2A SSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 282pF @ 15V, 185pF @ 15V
Rds On (Max) @ Id, Vgs: 95mOhm @ 2.5A, 10V, 130mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V, 5.7nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6
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Технічний опис FDC6333C-G onsemi
Description: MOSFET N/P-CH 30V 2.5A/2A SSOT6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 700mW (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 2A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 282pF @ 15V, 185pF @ 15V, Rds On (Max) @ Id, Vgs: 95mOhm @ 2.5A, 10V, 130mOhm @ 2A, 10V, Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V, 5.7nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SuperSOT™-6.