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FDG6321C-F169

FDG6321C-F169 onsemi

FDG6321C_Rev4_Oct2017.PDF Виробник: onsemi
Description: MOSFET N/P-CH 25V 0.5A SC70-6
Packaging: Bulk
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 410mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V, 62pF @ 10V
Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V, 1.1Ohm @ 410mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V, 1.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
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Технічний опис FDG6321C-F169 onsemi

Description: MOSFET N/P-CH 25V 0.5A SC70-6, Packaging: Bulk, Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 300mW, Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 410mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V, 62pF @ 10V, Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V, 1.1Ohm @ 410mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V, 1.5nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SC-70-6.