FDI33N25TU Fairchild Semiconductor

Description: MOSFET N-CH 250V 33A I2PAK, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V, Drain to Source Voltage (Vdss): 250 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: I2PAK (TO-262), Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 235W (Tc), Rds On (Max) @ Id, Vgs: 94mOhm @ 16.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Input Capacitance (Ciss) (Max) @ Vds: 2135 pF @ 25 V, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA, Packaging: Tube.