
FDJ129P Fairchild Semiconductor

Description: MOSFET P-CH 20V 4.2A SC75-6 FLMP
Packaging: Bulk
Package / Case: SC-75-6 FLMP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 4.2A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC75-6 FLMP
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 10 V
на замовлення 249026 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна |
---|---|
606+ | 37.17 грн |
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Технічний опис FDJ129P Fairchild Semiconductor
Description: MOSFET P-CH 20V 4.2A SC75-6 FLMP, Packaging: Bulk, Package / Case: SC-75-6 FLMP, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), Rds On (Max) @ Id, Vgs: 70mOhm @ 4.2A, 4.5V, Power Dissipation (Max): 1.6W (Ta), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SC75-6 FLMP, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 10 V.