FDMS8670 Fairchild Semiconductor
Виробник: Fairchild Semiconductor
Description: MOSFET N-CH 30V 24A/42A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 3940 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Bulk
| Кількість | Ціна |
|---|---|
| 346+ | 65.42 грн |
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Технічний опис FDMS8670 Fairchild Semiconductor
Description: MOSFET N-CH 30V 24A/42A 8PQFN, Input Capacitance (Ciss) (Max) @ Vds: 3940 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-PQFN (5x6), Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 2.5W (Ta), 78W (Tc), Rds On (Max) @ Id, Vgs: 2.6mOhm @ 24A, 10V, Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 42A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Bulk.