FDZ208P Fairchild Semiconductor

Description: MOSFET P-CH 30V 12.5A 30BGA, Input Capacitance (Ciss) (Max) @ Vds: 2409 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: 30-BGA (4x3.5), Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 2.2W (Ta), Rds On (Max) @ Id, Vgs: 10.5mOhm @ 12.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 30-WFBGA, Packaging: Bulk.