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FF05130M2B

FF05130M2B fastSiC

5700_FF05130M2B.pdf
Виробник: fastSiC
Description: SICFET N-CH 500V 26A PQFN5x6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 6A, 15V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 6mA (Typ)
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
Vgs (Max): +15V, -8V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 300 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 300 V
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
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Технічний опис FF05130M2B fastSiC

Description: SICFET N-CH 500V 26A PQFN5x6, Packaging: Tape & Reel (TR), Package / Case: 8-PowerDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), Rds On (Max) @ Id, Vgs: 170mOhm @ 6A, 15V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 6mA (Typ), Supplier Device Package: 8-PQFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 12V, 15V, Vgs (Max): +15V, -8V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 300 V, Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 300 V, Qualification: AEC-Q101.