FF06010E-3A fastSiC

Description: SICFET N-CH 650V 169A TO-247-3L, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 169A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 60A, 18V, Power Dissipation (Max): 555W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 100mA, Supplier Device Package: TO-247-3L, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +18V, -8V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 400 V, Input Capacitance (Ciss) (Max) @ Vds: 7390 pF @ 400 V.