FF06010FA fastSiC
Виробник: fastSiCDescription: SICFET N-CH 650V 140A TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 60A, 18V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 7390 pF @ 400 V
на замовлення 290 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 4314.27 грн |
| 10+ | 1523.49 грн |
| 100+ | 1419.62 грн |
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Технічний опис FF06010FA fastSiC
Description: SICFET N-CH 650V 140A TOLL, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 140A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 60A, 18V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 100mA, Supplier Device Package: TOLL, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): 18V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 7390 pF @ 400 V.