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FF06020E-3A

FF06020E-3A fastSiC

Datasheet_FF06020E-3A.pdf
Виробник: fastSiC
Description: SICFET N-CH 650V 110A TO-247-3L
Input Capacitance (Ciss) (Max) @ Vds: 4437 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 194 nC @ 400 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +18V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Supplier Device Package: TO-247-3L
Vgs(th) (Max) @ Id: 2.5V @ 60mA (Typ)
Power Dissipation (Max): 405W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 35A, 18V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+2409.12 грн
10+850.40 грн
100+792.43 грн
В кошику  од. на суму  грн.
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Технічний опис FF06020E-3A fastSiC

Description: SICFET N-CH 650V 110A TO-247-3L, Input Capacitance (Ciss) (Max) @ Vds: 4437 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 194 nC @ 400 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): +18V, -8V, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Supplier Device Package: TO-247-3L, Vgs(th) (Max) @ Id: 2.5V @ 60mA (Typ), Power Dissipation (Max): 405W (Tc), Rds On (Max) @ Id, Vgs: 28mOhm @ 35A, 18V, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.