FF06020QA fastSiC
Виробник: fastSiC
Description: SICFET N-CH 650V 110A TO-247-4L
Input Capacitance (Ciss) (Max) @ Vds: 4437 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 194 nC @ 15 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +18V, -8V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 2.5V @ 60mA
Power Dissipation (Max): 405W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 35A, 18V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Package / Case: TO-247-4
Packaging: Tube
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2409.12 грн |
| 10+ | 850.40 грн |
| 100+ | 792.43 грн |
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Технічний опис FF06020QA fastSiC
Description: SICFET N-CH 650V 110A TO-247-4L, Input Capacitance (Ciss) (Max) @ Vds: 4437 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 194 nC @ 15 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): +18V, -8V, Drive Voltage (Max Rds On, Min Rds On): 18V, Supplier Device Package: TO-247-4L, Vgs(th) (Max) @ Id: 2.5V @ 60mA, Power Dissipation (Max): 405W (Tc), Rds On (Max) @ Id, Vgs: 28mOhm @ 35A, 18V, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Package / Case: TO-247-4, Packaging: Tube.