FF06030Q fastSiC
Виробник: fastSiCDescription: SICFET N-CH 650V 65A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 18V
Power Dissipation (Max): 202W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 40mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3015 pF @ 400 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 1463.83 грн |
| 10+ | 516.65 грн |
| 100+ | 481.50 грн |
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Технічний опис FF06030Q fastSiC
Description: SICFET N-CH 650V 65A TO-247-4L, Packaging: Tube, Package / Case: TO-247-4, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 65A (Tc), Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 18V, Power Dissipation (Max): 202W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 40mA, Supplier Device Package: TO-247-4L, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +18V, -8V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 3015 pF @ 400 V.