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FF06100J-7

FF06100J-7 fastSiC

FF06100J-7.PDF Виробник: fastSiC
Description: SICFET N-CH 650V 20.6A TO-263-7L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.6A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 18V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 14mA
Supplier Device Package: D2PAK-7L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
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Технічний опис FF06100J-7 fastSiC

Description: SICFET N-CH 650V 20.6A TO-263-7L, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20.6A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 18V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 14mA, Supplier Device Package: D2PAK-7L, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): 18V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V.