FF06320B fastSiC
Виробник: fastSiCDescription: SICFET N-CH 650V 8.6A PQFN5x6
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 2A, 18V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 4mA (Typ)
Supplier Device Package: 8-PQFN (5x6), Power56
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 318 pF @ 400 V
на замовлення 290 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 185.77 грн |
| 10+ | 65.75 грн |
| 100+ | 61.20 грн |
Відгуки про товар
Написати відгук
Технічний опис FF06320B fastSiC
Description: SICFET N-CH 650V 8.6A PQFN5x6, Packaging: Tape & Reel (TR), Package / Case: 9-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.6A (Tc), Rds On (Max) @ Id, Vgs: 420mOhm @ 2A, 18V, Power Dissipation (Max): 41W (Tc), Vgs(th) (Max) @ Id: 1.6V @ 4mA (Typ), Supplier Device Package: 8-PQFN (5x6), Power56, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +18V, -8V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 400 V, Input Capacitance (Ciss) (Max) @ Vds: 318 pF @ 400 V.