FF12040J-7 fastSiC

Description: SICFET N-CH 1200V 45A TO-263-7L, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), Rds On (Max) @ Id, Vgs: 56mOhm @ 20A, 18V, Power Dissipation (Max): 187W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 40mA (Typ), Supplier Device Package: TO-263-7L, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +18V, -8V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 800 V, Input Capacitance (Ciss) (Max) @ Vds: 3129 pF @ 800 V.