FF12080J-7A fastSiC

Description: SICFET N-CH 1200V 31A TO-263-7L, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 31A (Tc), Rds On (Max) @ Id, Vgs: 112mOhm @ 8A, 18V, Power Dissipation (Max): 214W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 20mA, Supplier Device Package: D2PAK-7L, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): 18V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 1548 pF @ 800 V, Packaging: Tape & Reel (TR).