FF400R12KT3HOSA1

FF400R12KT3HOSA1 Infineon Technologies


ds_ff400r12kt3_e_2_0_de-en.pdf.pdf Виробник: Infineon Technologies
Trans IGBT Module N-CH 1200V 580A 2000000mW Automotive Tray
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Технічний опис FF400R12KT3HOSA1 Infineon Technologies

Description: IGBT MOD 1200V 580A 2000W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: 2 Independent, Operating Temperature: -40°C ~ 125°C, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A, NTC Thermistor: No, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 580 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 2000 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 28 nF @ 25 V.

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FF400R12KT3HOSA1 FF400R12KT3HOSA1 Виробник : Infineon Technologies Infineon-FF400R12KT3-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b4345f49601d Description: IGBT MOD 1200V 580A 2000W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 580 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
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