FF450R06ME3 INFINEON TECHNOLOGIES
Виробник: INFINEON TECHNOLOGIESCategory: IGBT modules
Description: Transistor/transistor; IGBT half-bridge,NTC thermistor; 1.25kW
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Power dissipation: 1.25kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoDUAL™ 3
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: AG-ECONOD-3
кількість в упаковці: 1 шт
товару немає в наявності
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Технічний опис FF450R06ME3 INFINEON TECHNOLOGIES
Category: IGBT modules, Description: Transistor/transistor; IGBT half-bridge,NTC thermistor; 1.25kW, Max. off-state voltage: 0.6kV, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 450A, Pulsed collector current: 900A, Power dissipation: 1.25kW, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Technology: EconoDUAL™ 3, Topology: IGBT half-bridge; NTC thermistor, Type of semiconductor module: IGBT, Case: AG-ECONOD-3, кількість в упаковці: 1 шт.
Інші пропозиції FF450R06ME3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| FF450R06ME3 | Виробник : Infineon Technologies |
IGBT Modules N-CH 600V 550A |
товару немає в наявності |
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FF450R06ME3 | Виробник : INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Transistor/transistor; IGBT half-bridge,NTC thermistor; 1.25kW Max. off-state voltage: 0.6kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 450A Pulsed collector current: 900A Power dissipation: 1.25kW Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: EconoDUAL™ 3 Topology: IGBT half-bridge; NTC thermistor Type of semiconductor module: IGBT Case: AG-ECONOD-3 |
товару немає в наявності |